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28 August 2015 Development of high gain avalanche photodiodes for UV imaging applications
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Abstract
High-resolution imaging in ultraviolet (UV) bands has many applications in defense and commercial systems. The shortest wavelength is desired for increased spatial resolution, which allows for small pixels and large formats. The next frontier is to develop UV avalanche photodiode (UV-APD) arrays with high gain to demonstrate high-resolution imaging. We compare performance characteristics of front-illuminated Al0.05Ga0.95N UV-APDs grown on a free-standing (FS) GaN substrate and a GaN/sapphire template. UV-APDs grown on a FS-GaN substrate show lower dark current densities for all fabricated mesa sizes than similar UV-APDs grown on a GaN/sapphire template. In addition, stable avalanche gain higher than 5×105 and a significant increase in the responsivity of UV-APDs grown on a FS-GaN substrate are observed as a result of avalanche multiplication at high reverse bias. We believe that the high crystalline quality of Al0.05Ga0.95N UVAPDs grown on a FS-GaN substrate with low dislocation density is responsible for the observed improvement of low leakage currents, high performance photodetector characteristics, and reliability of the devices.
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Ashok K. Sood, John W. Zeller, Roger E. Welser, Yash R. Puri, Russell D. Dupuis, Mi-Hee Ji, Jeomoh Kim, Theeradetch Detchprohm, Nibir K. Dhar, Jay S. Lewis, and Roy L. Peters "Development of high gain avalanche photodiodes for UV imaging applications", Proc. SPIE 9609, Infrared Sensors, Devices, and Applications V, 96090X (28 August 2015); https://doi.org/10.1117/12.2193182
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