28 August 2015 Large format MBE HgCdTe on silicon detector development for astronomy
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Abstract
The Center for Detectors at Rochester Institute of Technology and Raytheon Vision Systems (RVS) are leveraging RVS capabilities to produce large format, short-wave infrared HgCdTe focal plane arrays on silicon (Si) substrate wafers. Molecular beam epitaxial (MBE) grown HgCdTe on Si can reduce detector fabrication costs dramatically, while keeping performance competitive with HgCdTe grown on CdZnTe. Reduction in detector costs will alleviate a dominant expense for observational astrophysics telescopes. This paper presents the characterization of 2.5μm cutoff MBE HgCdTe/Si detectors including pre- and post-thinning performance. Detector characteristics presented include dark current, read noise, spectral response, persistence, linearity, crosstalk probability, and analysis of material defects.
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Brandon J. Hanold, Brandon J. Hanold, Donald F. Figer, Donald F. Figer, Joong Lee, Joong Lee, Kimberly Kolb, Kimberly Kolb, Iain Marcuson, Iain Marcuson, Elizabeth Corrales, Elizabeth Corrales, Jonathan Getty, Jonathan Getty, Lynn Mears, Lynn Mears, } "Large format MBE HgCdTe on silicon detector development for astronomy", Proc. SPIE 9609, Infrared Sensors, Devices, and Applications V, 96090Y (28 August 2015); doi: 10.1117/12.2195991; https://doi.org/10.1117/12.2195991
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