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1 September 2015 Proton irradiation of MWIR HgCdTe/CdZnTe
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Abstract
High performance infrared sensors are vulnerable to slight changes in defect densities and locations. For example in a space application where such sensors are exposed to proton irradiation capable of generating point defects the sensors are known to suffer performance degradation. The degradation can generally be observed in terms of dark current density and responsivity degradations. Here we report results of MWIR HgCdTe/CdZnTe single element diodes dark current densities before and after exposure to 63MeV protons at room temperature to a total ionizing dose of 100 kRad(Si). We find the irradiated diodes as a group show some signs of proton-induced damage in dark current.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen Fahey, Silviu Velicu, Ramana Bommena, Jun Zhao, Vincent Cowan, Christian Morath, and Sivalingam Sivananthan "Proton irradiation of MWIR HgCdTe/CdZnTe", Proc. SPIE 9616, Nanophotonics and Macrophotonics for Space Environments IX, 96160E (1 September 2015); https://doi.org/10.1117/12.2189829
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