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1 September 2015 Progress towards vertical transport study of proton-irradiated InAs/GaSb type-II strained-layer superlattice materials for space-based infrared detectors using magnetoresistance measurements
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Abstract
InAs/GaSb type-II strained-layer superlattice (T2SLS) materials are being considered for space-based infrared detector applications. However, an inadequate understanding of the role of carrier transport, specifically the vertical mobility, in the radiation tolerance of T2SLS detectors remains. Here, progress towards a vertical transport study of proton-irradiated, p-type InAs/GaSb T2SLS materials using magnetoresistance measurements is reported. Measurements in the growth direction of square mesas formed from InAs/GaSb superlattice material were performed using two distinct contact geometries in a Kelvin mode setup at variable magnetic fields, ranging from -9 T to 9 T, and temperatures, ranging from 5 K and 300 K. The results here suggested multi-carrier conduction and a field-dependent series resistance from the contact layer were present. The implications of these results and the plans for future magnetoresistance measurements on proton-irradiated T2SLS materials are discussed.
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Mitchell C. Malone, Christian P. Morath, Stephen Fahey, Brianna Klein, Vincent M. Cowan, and Sanjay Krishna "Progress towards vertical transport study of proton-irradiated InAs/GaSb type-II strained-layer superlattice materials for space-based infrared detectors using magnetoresistance measurements", Proc. SPIE 9616, Nanophotonics and Macrophotonics for Space Environments IX, 96160I (1 September 2015); https://doi.org/10.1117/12.2188405
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