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10 August 2015 Effect of p-GaN layer doping on the photoresponse of GaN-based p-i-n ultraviolet photodetectors
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Proceedings Volume 9620, 2015 International Conference on Optical Instruments and Technology: Optical Sensors and Applications; 96200U (2015) https://doi.org/10.1117/12.2191941
Event: International Conference on Optical Instruments and Technology 2015, 2015, Beijing, China
Abstract
We report on two-dimensional (2D) numerical simulations of photoresponse characteristics for GaN based p-i-n ultraviolet (UV) photodetectors. Effects of doping density of p-GaN layer on the photoresponse have been investigated. In order to accurately simulate the device performance, the theoretical calculation includes doping-dependent mobility degradation by Arora model and high field saturation model. Theoretical modeling shows that the doping density of p- GaN layer can significantly affect the photoresponse of GaN based p-i-n UV photodetectors, especially at schottky contact. We have to make a suitable choice of the doping in the device design according to the simulation results.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Wang, Jin Guo, Feng Xie, Wanjun Wang, Guosheng Wang, Haoran Wu, Tanglin Wang, and Man Song "Effect of p-GaN layer doping on the photoresponse of GaN-based p-i-n ultraviolet photodetectors", Proc. SPIE 9620, 2015 International Conference on Optical Instruments and Technology: Optical Sensors and Applications, 96200U (10 August 2015); https://doi.org/10.1117/12.2191941
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