Translator Disclaimer
5 August 2015 Excimer laser annealing of ZnO films prepared by sputtering process
Author Affiliations +
Proceedings Volume 9621, 2015 International Conference on Optical Instruments and Technology: Advanced Lasers and Applications; 96210E (2015) https://doi.org/10.1117/12.2193247
Event: International Conference on Optical Instruments and Technology 2015, 2015, Beijing, China
Abstract
Excimer laser with nanosecond pulse duration can induce low thermal budget processing and heating confinement near the surface region, which make excimer laser annealing process suitable for low-temperature growth of oxide films. This work presented 248 nm KrF excimer laser irradiation processes of ZnO films prepared by a DC magnetron sputtering method. The influence of the laser energy densities on the structural, morphology, optical and electrical characteristics of ZnO films were investigated. The results presented that the crystallinity of ZnO films could be raised obviously by the excimer laser annealing process. The film under laser irradiation with 137 mJ/cm2 outputs showed the lowest sheet resistance of 10 kΩ/□ and high visible transmittance (~77.4%). This study indicated that excimer laser annealing is a useful method for the performance improvement of oxide films.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jingzhen Shao, Xiaodong Fang, and Xi Wang "Excimer laser annealing of ZnO films prepared by sputtering process", Proc. SPIE 9621, 2015 International Conference on Optical Instruments and Technology: Advanced Lasers and Applications, 96210E (5 August 2015); https://doi.org/10.1117/12.2193247
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
Back to Top