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5 August 2015 Evaluation of a single-pixel one-transistor active pixel sensor for low-dose indirect-conversion X-ray imaging
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Abstract
We designed and fabricated a dual-gate photosensitive TFT with active amorphous silicon thickness of 240nm and W/L ratio of 250μm/20μm by using a conventional six-mask photography microfabrication process. A single-pixel sensor was tested under different light conditions to mimic the real situation of X-ray exposure via the scintillator. The results demonstrate the capability of using dual-gate photosensitive TFT to acquire an X-ray image indirectly.
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Xinghui Liu, Hai Ou, Jun Chen, and Kai Wang "Evaluation of a single-pixel one-transistor active pixel sensor for low-dose indirect-conversion X-ray imaging", Proc. SPIE 9622, 2015 International Conference on Optical Instruments and Technology: Optoelectronic Imaging and Processing Technology, 962208 (5 August 2015); https://doi.org/10.1117/12.2190775
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