12 August 2015 Ultra-broadband terahertz spectroscopy of InP wafer using coherent heterodyne time domain spectrometer
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Proceedings Volume 9625, 2015 International Conference on Optical Instruments and Technology: Terahertz Technologies and Applications; 96250B (2015) https://doi.org/10.1117/12.2193388
Event: International Conference on Optical Instruments and Technology 2015, 2015, Beijing, China
Abstract
Indium Phosphide (InP) has attracted great physical interest because of its unique characteristics and is indispensable to both optical and electronic devices. In this paper, we study the optical properties of undoped (100) InP wafer in the ultra-broad terahertz frequency range (0.5-18 THz) by using air-biased-coherent-detection (ABCD) system. It is observed that InP wafer is opaque at the frequencies spanning from 6.7 THz to 12.1 THz. In the frequency regions of 0.8-6.7 THz and 12.1-18 THz it has relatively low absorption coefficient. Meanwhile, the refractive index increases monotonously in the 0.8-6.7 THz region and 12.1-18 THz region. These findings will contribute to the design of InP based component for nonlinear terahertz devices.
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Xiaoyan Xu, Xiaoyan Xu, Liangliang Zhang, Liangliang Zhang, Cunlin Zhang, Cunlin Zhang, } "Ultra-broadband terahertz spectroscopy of InP wafer using coherent heterodyne time domain spectrometer", Proc. SPIE 9625, 2015 International Conference on Optical Instruments and Technology: Terahertz Technologies and Applications, 96250B (12 August 2015); doi: 10.1117/12.2193388; https://doi.org/10.1117/12.2193388
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