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A new optical characterization method based on imaging spectroscopic reflectometry (ISR) is presented and illustrated on the characterization of rough non-uniform epitaxial ZnSe films prepared on GaAs substrates. The method allows the determination of all parameters describing the thin films exhibiting boundary roughness and non-uniformity in thickness, i.e. determination of the spectral dependencies of the optical constants, map of local thickness and map of local rms values of heights of the irregularities for the rough boundaries. The local normal reflectance spectra in ISR correspond to small areas (37×37 μm2) on the thin films measured within the spectral range 270{900 nm by pixels of a CCD camera serving as the detector of imaging spectrophotometer constructed in our laboratory. To our experience the small areas corresponding to the pixels are sufficiently small so that the majority of the films can be considered uniform in all parameters within these areas. Boundary roughness is included into the reflectance formulas by means of the scalar diffraction theory (SDT) and the optical constant spectra of the ZnSe films were expressed by the dispersion model based on the parametrization of the joint density of electronic states (PJDOS). In general, there is a correlation between the searched parameters if the individual local reflectance spectra are fitted separately and, therefore, the local reflectance spectra measured for all the pixels are treated simultaneously using so called multi-pixel method in order to remove or reduce this correlation and determine the values of all the parameters with a sufficient accuracy. The results of the optical characterization of the same selected sample of the epitaxial ZnSe thin film obtained using the method presented here and combined method of variable-angle spectroscopic ellipsometry, spectroscopic reflectometry and single-pixel immersion spectroscopic reflectometry are introduced in the contribution as well.
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