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8 February 1988 Nave Mixing In Photorefractive GaAs And InP Semiconductors: Amplification, Phase Conjugation And Oscillations
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Proceedings Volume 0963, Optical Computing '88; (1988)
Event: Optical Computing '88, 1988, Toulon, France
The photorefractive behavior of semiconductor materials is receiving much attention for applications involving high nonlinearities at wavelengths compatible with solid state lasers. Bulk GaAs and InP semiconductors are currently examined with regards to achieving efficient interactions in wave mixing experiments. In this paper, we present the characteristics of photorefractive crystals with applications to image amplification, phase conjugation and self-induced oscillations.(1-4) The two crystals InP:Fe and GaAs:Cr are oriented for maximum beam coupling and under uniform illumination their conductivities varie as σInP (0-1CM-1) = (18,5+0,6810)10-9 and aGaAs 41-1CM-1) = (2,8+1,41.) 10-9 (with I. in Their measured intrinsic absorption coefficients are : ainp = 2,5 cm-1 and aG,A. = 1,65 cm-1. The experimental set-up for two beam coupling is shown in Fig.1. A low power cw diode pumped YAG laser (40 mW, 1 = 1.06μm) provides a signal beam I.. and a pump beam Ipo whose frequency is Doppler shifted by reflection on the piezomiror M (moving grating recording mode). The gain is measured through the parameter y., defined as (5)
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Imbert, H. Rajbenbach, S. Mallick, J. P Herriau, and J. P. Huignard "Nave Mixing In Photorefractive GaAs And InP Semiconductors: Amplification, Phase Conjugation And Oscillations", Proc. SPIE 0963, Optical Computing '88, (8 February 1988);


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