23 October 2015 Viability of pattern shift for defect-free EUV photomasks at the 7nm node
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Several challenges hinder EUV photomask fabrication and its readiness for high volume manufacturing (HVM). The lack in availability of pristine defect-free blanks as well as the absence of a robust mask repair technique mandates defect mitigation through pattern shift for the production of defect-free photomasks. By using known defect locations on a blank, the mask design can be intentionally shifted to avoid patterning directly over a defect. The work presented here provides a comprehensive look at pattern shift implementation to intersect EUV HVM for the 7 nm technology node. An empirical error budget to compensate for various measurement errors, based on the latest HVM inspection and write tool capabilities, is first established and then verified post-patterning. The validated error budget is applied to 20 representative EUV blanks and pattern shift is performed using OPC’d 7 nm node fully functional chip designs that were also recently used to fabricate working 7 nm node devices. Probability of defect-free masks are explored for various 7 nm mask levels, including metal, contact, and gate cut layers. From these results, an assessment is made on the current viability of defect-free EUV masks for the 7 nm node.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhengqing John Qi, Zhengqing John Qi, Jed Rankin, Jed Rankin, Eisuke Narita, Eisuke Narita, Masayuki Kagawa, Masayuki Kagawa, } "Viability of pattern shift for defect-free EUV photomasks at the 7nm node", Proc. SPIE 9635, Photomask Technology 2015, 96350N (23 October 2015); doi: 10.1117/12.2197922; https://doi.org/10.1117/12.2197922


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