Nanoimprint system development and status for high-volume semiconductor manufacturing

Kazunori Iwamoto; Takehiko Iwanaga; S. V. Sreenivasan; Junji Iwasa

doi:10.1117/12.2197520

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23 October 2015 Nanoimprint system development and status for high-volume semiconductor manufacturing

Kazunori Iwamoto, Takehiko Iwanaga, S. V. Sreenivasan, Junji Iwasa

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Proceedings Volume 9635, Photomask Technology 2015; 96350P (2015) https://doi.org/10.1117/12.2197520
Event: SPIE Photomask Technology, 2015, Monterey, California, United States

Abstract

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography* (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. The purpose of this paper is to describe the technology advancements made to both wafer imprint and mask replication systems that will be applied for the fabrication of advanced devices such as NAND Flash memory and DRAM. Overlay of better than 5nm (mean + 3sigma) has been demonstrated, and throughputs of better than 10 wafers per imprint station are now routinely achieved. Defectivity has been reduced by more than two orders of magnitude and particle adders within the tool have come down by approximately four orders of magnitude. A pilot line tool, the FPA- 1100 NZ2, was used to generate most of the results in this work. Additionally, particle control in a mask replication tool is addressed, with the purpose of extending the

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Kazunori Iwamoto, Takehiko Iwanaga, S. V. Sreenivasan, and Junji Iwasa "Nanoimprint system development and status for high-volume semiconductor manufacturing", Proc. SPIE 9635, Photomask Technology 2015, 96350P (23 October 2015); https://doi.org/10.1117/12.2197520

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