Photomask repair using low-energetic electrons

K. Edinger; K. Wolff; P. Spies; T. Luchs; H. Schneider; N. Auth; Ch. F. Hermanns; M. Waiblinger

doi:10.1117/12.2207755

23 October 2015 Photomask repair using low-energetic electrons

K. Edinger, K. Wolff, P. Spies, T. Luchs, H. Schneider, N. Auth, Ch. F. Hermanns, M. Waiblinger

Proceedings Volume 9635, Photomask Technology 2015; 96351P (2015) https://doi.org/10.1117/12.2207755
Event: SPIE Photomask Technology, 2015, Monterey, California, United States

Abstract

Mask repair is an essential step in the mask manufacturing process as the extension of 193nm technology and the insertion of EUV are drivers for mask complexity and cost. The ability to repair all types of defects on all mask blank materials is crucial for the economic success of a mask shop operation. In the future mask repair is facing several challenges. The mask minimum features sizes are shrinking and require a higher resolution repair tool. At the same time mask blanks with different new mask materials are introduced to optimize optical performance and long term durability. For EUV masks new classes of defects like multilayer and phase defects are entering the stage. In order to achieve a high yield, mask repair has to cover etch and deposition capabilities and must not damage the mask. We will demonstrate in this paper that low energetic electron-beam (e-beam)-based mask repair is a commercially viable solution. Therefore we developed a new repair platform called MeRiT^® neXT to address the technical challenges of this new technology. We will analyze the limits of the existing as well as lower energetic electron induced repair technologies theoretically and experimentally and show performance data on photomask reticles. Based on this data, we will give an outlook to future mask repair technology.

Citation Download Citation

K. Edinger, K. Wolff, P. Spies, T. Luchs, H. Schneider, N. Auth, Ch. F. Hermanns, and M. Waiblinger "Photomask repair using low-energetic electrons", Proc. SPIE 9635, Photomask Technology 2015, 96351P (23 October 2015); https://doi.org/10.1117/12.2207755

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