In this study, we investigated new method to measure MoSi pattern CD before Cr strip process to eliminate the CD gap between MoSi pattern and Cr/MoSi pattern. To eliminate the CD gap, we attempt three solutions – 1) Optimize etch process to perform perfect Cr/MoSi pattern profile without the CD gap, 2) Improve CD measurement accuracy by developing new SEM measuring mechanism, 3) Develop of new process to modify Cr/MoSi pattern profile to be measured without the CD gap. It was found that the CD gap can be eliminated and MoSi pattern CD can be measured perfectly. Finally, MoSi pattern CD control was improved because of CD gap elimination.
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Sangjin Jo, Chungseon Choi, Sunghyun Oh, Taejoong Ha, Youngmo Lee, Sangpyo Kim, Donggyu Yim, "Novel CD control of HTPSM by advanced process for sub-20nm tech," Proc. SPIE 9635, Photomask Technology 2015, 96351T (23 October 2015);