2 November 2015 Photomask linewidth comparison by PTB and NIST
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Proceedings Volume 9636, Scanning Microscopies 2015; 96360S (2015) https://doi.org/10.1117/12.2199453
Event: SPIE Scanning Microscopies, 2015, Monterey, California, United States
We report the initial results of a recent bilateral comparison of linewidth or critical dimension (CD) calibrations on photomask line features between two national metrology institutes (NMIs): the National Institute of Standards and Technology (NIST) in the United States and the Physikalisch-Technische Bundesanstalt (PTB) in Germany. For the comparison, a chrome on glass (CoG) photomask was used which has a layout of line features down to 100 nm nominal size. Different measurement methods were used at both institutes. These included: critical dimension atomic force microscopy (CD-AFM), CD scanning electron microscopy (CD-SEM) and ultraviolet (UV) transmission optical microscopy. The measurands are CD at 50 % height of the features as well as sidewall angle and line width roughness (LWR) of the features. On the isolated opaque features, we found agreement of the CD measurements at the 3 nm to 5 nm level on most features – usually within the combined expanded uncertainties of the measurements.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Bergmann, D. Bergmann, B. Bodermann, B. Bodermann, H. Bosse, H. Bosse, E. Buhr, E. Buhr, G. Dai, G. Dai, R. Dixson, R. Dixson, W. Häßler-Grohne, W. Häßler-Grohne, K. Hahm, K. Hahm, M. Wurm, M. Wurm, } "Photomask linewidth comparison by PTB and NIST", Proc. SPIE 9636, Scanning Microscopies 2015, 96360S (2 November 2015); doi: 10.1117/12.2199453; https://doi.org/10.1117/12.2199453

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