InAs photodiode for low temperature sensing

X. Zhou; J. S. Ng; C. H. Tan

doi:10.1117/12.2197343

12 October 2015 InAs photodiode for low temperature sensing

X. Zhou, J. S. Ng, C. H. Tan

Proceedings Volume 9639, Sensors, Systems, and Next-Generation Satellites XIX; 96390V (2015) https://doi.org/10.1117/12.2197343
Event: SPIE Remote Sensing, 2015, Toulouse, France

Abstract

We report on the evaluation of InAs photodiodes and their potential for low temperature sensing. InAs n-i-p photodiodes were grown and analyzed in this work. Radiation thermometry measurements were performed at reference blackbody temperatures of 37 to 80°C to determine photocurrent and temperature error. The uncooled InAs photodiodes, with a cutoff wavelength of 3.55 μm, detect a target temperature above 37°C with a temperature error of less than 0.46°C. When the photodiode was cooled to 200 K, the temperature error at 37°C improves by 10 times from 0.46 to 0.048°C, suggesting the potential of using InAs for human temperature sensing.

Citation Download Citation

X. Zhou, J. S. Ng, and C. H. Tan "InAs photodiode for low temperature sensing", Proc. SPIE 9639, Sensors, Systems, and Next-Generation Satellites XIX, 96390V (12 October 2015); https://doi.org/10.1117/12.2197343

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