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12 October 2015 InAs photodiode for low temperature sensing
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Abstract
We report on the evaluation of InAs photodiodes and their potential for low temperature sensing. InAs n-i-p photodiodes were grown and analyzed in this work. Radiation thermometry measurements were performed at reference blackbody temperatures of 37 to 80°C to determine photocurrent and temperature error. The uncooled InAs photodiodes, with a cutoff wavelength of 3.55 μm, detect a target temperature above 37°C with a temperature error of less than 0.46°C. When the photodiode was cooled to 200 K, the temperature error at 37°C improves by 10 times from 0.46 to 0.048°C, suggesting the potential of using InAs for human temperature sensing.
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X. Zhou, J. S. Ng, and C. H. Tan "InAs photodiode for low temperature sensing", Proc. SPIE 9639, Sensors, Systems, and Next-Generation Satellites XIX, 96390V (12 October 2015); https://doi.org/10.1117/12.2197343
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