13 October 2015 AlGaInN laser diode technology and systems for defence and security applications
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Abstract
AlGaInN laser diodes is an emerging technology for defence and security applications such as underwater communications and sensing, atomic clocks and quantum information. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries. Ridge waveguide laser diodes are fabricated to achieve single mode operation with optical powers up to 100mW with the 400-440nm wavelength range with high reliability. Visible free-space and underwater communication at frequencies up to 2.5GHz is reported using a directly modulated 422nm GaN laser diode. Low defectivity and highly uniform GaN substrates allow arrays and bars to be fabricated. High power operation operation of AlGaInN laser bars with up to 20 emitters have been demonstrated at optical powers up to 4W in a CS package with common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space or optical fibre system integration with a very small form-factor.
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Stephen P. Najda, Stephen P. Najda, Piotr Perlin, Piotr Perlin, Tadek Suski, Tadek Suski, Lujca Marona, Lujca Marona, Mike Boćkowski, Mike Boćkowski, Mike Leszczyński, Mike Leszczyński, Przemek Wisniewski, Przemek Wisniewski, Robert Czernecki, Robert Czernecki, Robert Kucharski, Robert Kucharski, Grzegorz Targowski, Grzegorz Targowski, Scott Watson, Scott Watson, Antony E. Kelly, Antony E. Kelly, } "AlGaInN laser diode technology and systems for defence and security applications", Proc. SPIE 9649, Electro-Optical Remote Sensing, Photonic Technologies, and Applications IX, 96490P (13 October 2015); doi: 10.1117/12.2193381; https://doi.org/10.1117/12.2193381
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