22 August 2015 Biasing dependent circuit modeling and optimization of resonant cavity enhanced PIN photodetectors (RCE-PIN-PDs)
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Proceedings Volume 9656, International Symposium on Photonics and Optoelectronics 2015; 96560P (2015) https://doi.org/10.1117/12.2197393
Event: International Symposium on Photonics and Optics, 2015, Shanghai, China
Abstract
Resonant Cavity Enhanced Photodetectors (RCE-PDs) are a possible solution to overcome the trade-off between bandwidth and quantum efficiency in the conventional photodetectors. In RCE-PDs, thin absorption layer gives rise to a large bandwidth, while the multiple passes of light in the absorption layer due to the resonant cavity increases the quantum efficiency. In this paper, an extended calibrated circuit model for RCE-PIN-PD is presented. This model includes the effects of the biasing of the photodetector resulting in the feasibility of a complete circuit simulation of the entire photoreceiver circuit. The effects of the biasing over the performance of RCE-PIN-PDs have been studied for different loads and different thicknesses of the absorption layer of the photodetector. Based on the studies of different parameters for design and materials, optimization has been performed for the RCE-PINPDs. With this optimization, the optimal values of the thickness of the absorption layer to produce the highest bandwidth of the photodetector are obtained for different biasing values. These optimizations are performed for different areas of the photodetector and also for different load resistors, and they result in a significant improvement in the performance of this type of photodetector.
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Yasser M. El-Batawy, Yasser M. El-Batawy, Marina Medhat, Marina Medhat, } "Biasing dependent circuit modeling and optimization of resonant cavity enhanced PIN photodetectors (RCE-PIN-PDs)", Proc. SPIE 9656, International Symposium on Photonics and Optoelectronics 2015, 96560P (22 August 2015); doi: 10.1117/12.2197393; https://doi.org/10.1117/12.2197393
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