Electroluminescence spectrum in amorphous-Si/ silicon oxynitride multilayer structures

Xiang Wang; Chao Song; Jie Song; Yanqing Guo; Rui Huang

doi:10.1117/12.2197439

22 August 2015 Electroluminescence spectrum in amorphous-Si/ silicon oxynitride multilayer structures

Xiang Wang, Chao Song, Jie Song, Yanqing Guo, Rui Huang

Proceedings Volume 9656, International Symposium on Photonics and Optoelectronics 2015; 96560Q (2015) https://doi.org/10.1117/12.2197439
Event: International Symposium on Photonics and Optics, 2015, Shanghai, China

Abstract

A series of amorphous-Si/silicon oxynitride multilayer were deposited on the ITO (40Ω/cm) glass substrates in a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) system. We prepared 8-period a-Si/ SiO_xN_y multilayer with thickness of 4 nm both for the amorphous Si and SiO_xN_ysublayers. The EL diodes can operate at room temperature and the turn-on voltage is about 10V. We study the room-temperature electroluminescence from as deposited amorphous-Si/silicon oxynitride multilayer structure.

Citation Download Citation

Xiang Wang, Chao Song, Jie Song, Yanqing Guo, and Rui Huang "Electroluminescence spectrum in amorphous-Si/ silicon oxynitride multilayer structures", Proc. SPIE 9656, International Symposium on Photonics and Optoelectronics 2015, 96560Q (22 August 2015); https://doi.org/10.1117/12.2197439

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available