Translator Disclaimer
Paper
22 August 2015 Electroluminescence spectrum in amorphous-Si/ silicon oxynitride multilayer structures
Author Affiliations +
Proceedings Volume 9656, International Symposium on Photonics and Optoelectronics 2015; 96560Q (2015) https://doi.org/10.1117/12.2197439
Event: International Symposium on Photonics and Optics, 2015, Shanghai, China
Abstract
A series of amorphous-Si/silicon oxynitride multilayer were deposited on the ITO (40Ω/cm) glass substrates in a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) system. We prepared 8-period a-Si/ SiOxNy multilayer with thickness of 4 nm both for the amorphous Si and SiOxNy sublayers. The EL diodes can operate at room temperature and the turn-on voltage is about 10V. We study the room-temperature electroluminescence from as deposited amorphous-Si/silicon oxynitride multilayer structure.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiang Wang, Chao Song, Jie Song, Yanqing Guo, and Rui Huang "Electroluminescence spectrum in amorphous-Si/ silicon oxynitride multilayer structures", Proc. SPIE 9656, International Symposium on Photonics and Optoelectronics 2015, 96560Q (22 August 2015); https://doi.org/10.1117/12.2197439
PROCEEDINGS
4 PAGES


SHARE
Advertisement
Advertisement
Back to Top