Electroluminescence spectrum in amorphous-Si/ silicon oxynitride multilayer structures

Xiang Wang; Chao Song; Jie Song; Yanqing Guo; Rui Huang

doi:10.1117/12.2197439

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22 August 2015 Electroluminescence spectrum in amorphous-Si/ silicon oxynitride multilayer structures

Xiang Wang, Chao Song, Jie Song, Yanqing Guo, Rui Huang

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Proceedings Volume 9656, International Symposium on Photonics and Optoelectronics 2015; 96560Q (2015) https://doi.org/10.1117/12.2197439
Event: International Symposium on Photonics and Optics, 2015, Shanghai, China

Abstract

A series of amorphous-Si/silicon oxynitride multilayer were deposited on the ITO (40Ω/cm) glass substrates in a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) system. We prepared 8-period a-Si/ SiO_xN_y multilayer with thickness of 4 nm both for the amorphous Si and SiO_xN_ysublayers. The EL diodes can operate at room temperature and the turn-on voltage is about 10V. We study the room-temperature electroluminescence from as deposited amorphous-Si/silicon oxynitride multilayer structure.

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Xiang Wang, Chao Song, Jie Song, Yanqing Guo, and Rui Huang "Electroluminescence spectrum in amorphous-Si/ silicon oxynitride multilayer structures", Proc. SPIE 9656, International Symposium on Photonics and Optoelectronics 2015, 96560Q (22 August 2015); https://doi.org/10.1117/12.2197439

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