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22 August 2015 Strong blue light emission from Eu-doped SiOC prepared by magnetron sputtering
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Proceedings Volume 9656, International Symposium on Photonics and Optoelectronics 2015; 96560R (2015) https://doi.org/10.1117/12.2197518
Event: International Symposium on Photonics and Optics, 2015, Shanghai, China
Abstract
The Eu-doped SiOC films were prepared by magnetron sputtering technique at a low temperature of 250°C. The effects of the Eu2O3 deposited power and post-thermal annealing temperature on the PL characteristics of the Eu-doped SiOC films were investigated. It is found that the photoluminescence intensity could be enhanced by more than tenfold by increasing the Eu2O3 deposited power from 20W to 80W. Furthermore, very bright blue light emission can be clearly observed with the naked eye in a bright room for the Eu-doped SiOC films prepared at a Eu2O3 deposited power of 80 W. The improved PL intensity is attributed to the increasing number density of europium silicate clusters as a result of the increasing Eu2O3 deposited power as well as high annealing temperatures.
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Zhenxu Lin, Yanqing Guo, Xiang Wang, Chao Song, Jie Song, Yi Zhang, and Rui Huang "Strong blue light emission from Eu-doped SiOC prepared by magnetron sputtering", Proc. SPIE 9656, International Symposium on Photonics and Optoelectronics 2015, 96560R (22 August 2015); https://doi.org/10.1117/12.2197518
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