22 August 2015 Effect of oxygen partial pressure and anneal temperature on BaTiO3 thin film crystal structure
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Proceedings Volume 9656, International Symposium on Photonics and Optoelectronics 2015; 96560U (2015) https://doi.org/10.1117/12.2197568
Event: International Symposium on Photonics and Optics, 2015, Shanghai, China
Abstract
BaTiO3 film is deposited on single crystal MgO substrate with pulsed laser deposition, and its crystal structure and surface roughness are characterized by X-ray diffraction instrument and atomic force microscope. BaTiO3 film crystal quality is analyzed under three different oxygen partial pressure and three different annealing temperatures. The result shows that when the oxygen partial pressure is 15Pa, crystal surface (001) and (002) diffraction peak of BaTiO3 thin films have higher intensity. It indicated that the film has a good c-axis orientation. When the annealing temperature is 800°C, the intensity of diffraction peak is the maximum, and peak shape is sharper. BaTiO3 crystal film is obtained with highly preferred orientation, and film density is improved. Thus the film has less surface roughness and good crystalline state.
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Jing Zhang, Jing Zhang, De-gui Sun, De-gui Sun, Xiuhua Fu, Xiuhua Fu, Dong-mei Liu, Dong-mei Liu, Yong-gang Pan, Yong-gang Pan, Fei Yang, Fei Yang, } "Effect of oxygen partial pressure and anneal temperature on BaTiO3 thin film crystal structure", Proc. SPIE 9656, International Symposium on Photonics and Optoelectronics 2015, 96560U (22 August 2015); doi: 10.1117/12.2197568; https://doi.org/10.1117/12.2197568
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