22 August 2015 TCAD analysis of graphene silicon Schottky junction solar cell
Author Affiliations +
Proceedings Volume 9656, International Symposium on Photonics and Optoelectronics 2015; 96560W (2015) https://doi.org/10.1117/12.2197678
Event: International Symposium on Photonics and Optics, 2015, Shanghai, China
Abstract
The performance of graphene based Schottky junction solar cell on silicon substrate is studied theoretically by TCAD Silvaco tools. We calculate the current-voltage curves and internal quantum efficiency of this device at different conditions using tow dimensional model. The results show that the power conversion efficiency of Schottky solar cell dependents on the work function of graphene and the physical properties of silicon such as thickness and doping concentration. At higher concentration of 1e17cm-3 for n-type silicon, the dark current got a sharp rise compared with lower doping concentration which implies a convert of electron emission mechanism. The biggest fill factor got at higher phos doping predicts a new direction for higher performance graphene Schottky solar cell design.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yawei Kuang, Yawei Kuang, Yushen Liu, Yushen Liu, Yulong Ma, Yulong Ma, Jing Xu, Jing Xu, Xifeng Yang, Xifeng Yang, Jinfu Feng, Jinfu Feng, } "TCAD analysis of graphene silicon Schottky junction solar cell", Proc. SPIE 9656, International Symposium on Photonics and Optoelectronics 2015, 96560W (22 August 2015); doi: 10.1117/12.2197678; https://doi.org/10.1117/12.2197678
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT


Back to Top