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9 July 2015 Mask blank defect printability comparison using optical and SEM mask and wafer inspection and bright field actinic mask imaging
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Abstract
Despite significant enhancements in defect detection using optical and e-beam methodology, the smaller length scales and increasing challenges of future technology nodes motivate ongoing research into the need and associated cost of actinic inspection for EUV masks. This paper reports an extensive study of two EUV patterned masks, wherein the mask blank defectivity was characterized using optical (mask and wafer) methods and bright-field mask imaging (using the SHARP actinic microscope) of previously identified blank defects. We find that the bright field actinic imaging tool microscope captures and images many defects that are not seen by the automated optical inspection of patterned masks and printed wafers. In addition, actinic review reveals the impact of multilayer damage and depicts the printability profile which can be used as an added metric to define the patterned mask repair and defect compensation strategies.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pawitter Mangat, Erik Verduijn, Obert R. Wood II, Markus P. Benk, Antoine Wojdyla, and Kenneth A. Goldberg "Mask blank defect printability comparison using optical and SEM mask and wafer inspection and bright field actinic mask imaging", Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 96580E (9 July 2015); https://doi.org/10.1117/12.2201048
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