9 July 2015 ENDEAVOUR to understand EUV buried defect printability
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Abstract
NAP-PD (Native Acting Phase – Programmed Defects), otherwise known as buried program defects, with attributes very similar to native defects, are successfully fabricated using a high accuracy overlay technique. The defect detectability and visibility are analyzed with conventional phase contrast blank inspection @193 nm wavelength, pattern inspection @193 nm wavelength and SEM. The mask is also printed on wafer and printability is discussed. Finally, the inspection sensitivity and wafer printability are compared, leading to the observation that the current blank and pattern inspection sensitivity is not enough to detect all of the printable defects.
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Kazunori Seki, Kazunori Seki, Takeshi Isogawa, Takeshi Isogawa, Masayuki Kagawa, Masayuki Kagawa, Shinji Akima, Shinji Akima, Yutaka Kodera, Yutaka Kodera, Karen Badger, Karen Badger, Zhengqing John Qi, Zhengqing John Qi, Mark Lawliss, Mark Lawliss, Jed Rankin, Jed Rankin, Ravi Bonam, Ravi Bonam, } "ENDEAVOUR to understand EUV buried defect printability", Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 96580G (9 July 2015); doi: 10.1117/12.2197763; https://doi.org/10.1117/12.2197763
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