9 July 2015 Patterned mask inspection technology with Projection Electron Microscope (PEM) technique for 11 nm half-pitch (hp) generation EUV masks
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Abstract
High-sensitivity EUV mask pattern defect detection is one of the major issues in order to realize the device fabrication by using the EUV lithography. We have already designed a novel Projection Electron Microscope (PEM) optics that has been integrated into a new inspection system named EBEYE-V30 (“Model EBEYE” is an EBARA’s model code), and which seems to be quite promising for 16 nm hp generation EUVL Patterned mask Inspection (PI). Defect inspection sensitivity was evaluated by capturing an electron image generated at the mask by focusing onto an image sensor. The progress of the novel PEM optics performance is not only about making an image sensor with higher resolution but also about doing a better image processing to enhance the defect signal. In this paper, we describe the experimental results of EUV patterned mask inspection using the above-mentioned system. The performance of the system is measured in terms of defect detectability for 11 nm hp generation EUV mask. To improve the inspection throughput for 11 nm hp generation defect detection, it would require a data processing rate of greater than 1.5 Giga- Pixel-Per-Second (GPPS) that would realize less than eight hours of inspection time including the step-and-scan motion associated with the process. The aims of the development program are to attain a higher throughput, and enhance the defect detection sensitivity by using an adequate pixel size with sophisticated image processing resulting in a higher processing rate.
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Ryoichi Hirano, Ryoichi Hirano, Susumu Iida, Susumu Iida, Tsuyoshi Amano, Tsuyoshi Amano, Hidehiro Watanabe, Hidehiro Watanabe, Masahiro Hatakeyama, Masahiro Hatakeyama, Takeshi Murakami, Takeshi Murakami, Shoji Yoshikawa, Shoji Yoshikawa, Kenichi Suematsu, Kenichi Suematsu, Kenji Terao, Kenji Terao, } "Patterned mask inspection technology with Projection Electron Microscope (PEM) technique for 11 nm half-pitch (hp) generation EUV masks", Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 96580L (9 July 2015); doi: 10.1117/12.2197151; https://doi.org/10.1117/12.2197151
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