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9 July 2015 Development of new high transmission eaPSM for Negative Tone Development process on wafer
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Abstract
The retardation of the development of NGL techniques causes the extension of ArF immersion lithography for 1x-nm node. We have been researching the new phase shift mask's (PSM) material for the next generation ArF lithography. In this reports, we developed the low-k, high transmission PSM and evaluate it. The developed new PSM shows good lithographic performance in wafer and high ArF excimer laser durability. The mask processability were confirmed such as the CD performance, the cross section image, the inspection sensitivity and repair accuracy.
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Takashi Adachi, Ayako Tani, Yukihiro Fujimura, Shingo Yoshikawa, Katsuya Hayano, Yasutaka Morikawa, Yoichi Miura, and Hiroyuki Miyashita "Development of new high transmission eaPSM for Negative Tone Development process on wafer", Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 96580P (9 July 2015); https://doi.org/10.1117/12.2197611
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