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9 July 2015 The study of develop optimization to control various resist defect in Photomask fabrication
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To reduce the pattern size in photomask is an inevitable trend because of the minimization of chip size. So it makes a big challenge to control defects in photomask industry. Defects below a certain size that had not been any problem in previous technology node are becoming an issue as the patterns are smaller. Therefore, the acceptable tolerance levels for current defect size and quantity are dramatically reduced. Because these defects on photomask can be the sources of the repeating defects on wafer, small size defects smaller than 200nm should not be ignored any more. Generally, almost defects are generated during develop process and etch process. Especially it is difficult to find the root cause of defects formed during the develop process because of their various types and very small size. In this paper, we studied how these small defects can be eliminated by analyzing the defects and tuning the develop process. There are 3 types of resist defects which are named as follows. The first type is ‘Popcorn’ defect which is mainly occurred in negative resist and exists on the dark features. The second type is ‘Frog eggs’ defect which is occurred in 2nd process of HTPSM and exists on the wide space area. The last type is ‘Spot’ defect which also exists on the wide space area. These defects are generally appeared on the entire area of a plate and the number of these defects is about several hundred. It is thought that the original source is the surface’s hydrophilic state before develop process or the incongruity between resist and developer. This study shows that the optimizing the develop process can be a good solution for some resist defects.
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JongHoon Lim, ByungJu Kim, JaeSik Son, EuiSang Park, SangPyo Kim, and DongGyu Yim "The study of develop optimization to control various resist defect in Photomask fabrication", Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 96580Q (9 July 2015);


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