9 July 2015 Study of defect verification based on lithography simulation with a SEM system
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In a Photomask manufacturing process, mask defect inspection is an increasingly important topic for 193nm optical lithography. Further extension of 193nm optical lithography to the next technology nodes, staying at a maximum numerical aperture (NA) of 1.35, pushes lithography to its utmost limits. This extension from technologies like ILT and SMO requires more complex mask patterns. In mask defect inspection, defect verification becomes more difficult because many nuisance defects are detected in aggressive mask features. One of the solutions is lithography simulation like AIMS. An issue with AIMS, however, is the low throughput of measurement, analysis etc.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shingo Yoshikawa, Shingo Yoshikawa, Nobuaki Fujii, Nobuaki Fujii, Koichi Kanno, Koichi Kanno, Hidemichi Imai, Hidemichi Imai, Katsuya Hayano, Katsuya Hayano, Hiroyuki Miyashita, Hiroyuki Miyashita, Soichi Shida, Soichi Shida, Tsutomu Murakawa, Tsutomu Murakawa, Masayuki Kuribara, Masayuki Kuribara, Jun Matsumoto, Jun Matsumoto, Takayuki Nakamura, Takayuki Nakamura, Shohei Matsushita, Shohei Matsushita, Daisuke Hara, Daisuke Hara, Linyong Pang, Linyong Pang, } "Study of defect verification based on lithography simulation with a SEM system", Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 96580V (9 July 2015); doi: 10.1117/12.2197617; https://doi.org/10.1117/12.2197617

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