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9 July 2015 Mo/Si multilayer mirrors with 300-bilayers for EUV lithography
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Abstract
Mo/Si multilayer mirror with 300-bilayers for EUV lithography is developed for the purpose of long-lifetime use in LPP EUV source. The multilayer mirrors are fabricated by a magnetron sputtering method and are characterized by coherence scanning interferometry, XRR and EUV reflectometer. The results show the excellent performance of 320 layer pair multilayer being useful for EUV multilayer mirror.
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Satoshi Ichimaru, Masatoshi Hatayama, Tadayuki Ohchi, and Satoshi Oku "Mo/Si multilayer mirrors with 300-bilayers for EUV lithography", Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 965814 (9 July 2015); doi: 10.1117/12.2197314; https://doi.org/10.1117/12.2197314
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