9 July 2015 Fabrication of microfluidic paths using thick and vertical resist patterns printed by exposure with intentional large defocus
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Abstract
A new method to print patterns with very sharp vertical side walls in thick negative resist SU-8 was investigated. In addition, the technology was swiftly applied to fabrication of microfluidic devices. At first, 50-μm line-and-space patterns were printed using SU-8 with a thickness of 100 μm. When the best focal position for the thin resist film with a thickness of approximately 1 μm is defined as the focus origin, vertical sidewalls were obtained at defocus positions of between +2,400 μm and +3,000 μm. The profiles became the best at the defocus of +2,400 μm. Here, the plus defocus means that wafers were lowered far from the lens. It was considered that the excellent profiles were obtained because the light intensity decrease caused by the absorption in the resist was just balanced with the degradation and extent of positional light-intensity distribution caused by the intentional defocus. Using the technology, various flow- path patterns of microfluidic devices were successfully fabricated.
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Yuta Morizane, Yuta Morizane, Toshiyuki Horiuchi, Toshiyuki Horiuchi, } "Fabrication of microfluidic paths using thick and vertical resist patterns printed by exposure with intentional large defocus", Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 965816 (9 July 2015); doi: 10.1117/12.2192936; https://doi.org/10.1117/12.2192936
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