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9 July 2015 Development of a reflectometer for a large EUV mirror in NewSUBARU
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Abstract
In extreme-ultraviolet (EUV) lithography, mirror optics is coated with a Mo/Si multilayer film. Since throughput of an EUV system is directly depends on the multilayer film reflectance, we have developed a mask reflectometer to evaluate the reflectance in BL-10 beamline of the NewSUBARU synchrotron facility. In particular, the EUV output power from a EUV light source relates to the reflectance of a collector mirror. Thus, we installed a new large reflectometer in BL-10 beamline to evaluate the collector mirror reflectance. The reflectometer can measure a mirror with a diameter of up to 800 mm, a thickness of 250 mm, and a weight of 50 kg. The entire sample surface can be measured in spherical coordinate using vertical γ and rotation Φ axis. Each axis positions are measured with optical encoders precisely, and are controlled in closed-loop operation. We measured reflectance of an EUV mask using the large reflectometer and the mask reflectometer. The peak reflectance was well consisted with the two reflectometer within 0.1%. The large reflectometer has high reproducibility of the peak reflectance measurement.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haruki Iguchi, Hiraku Hashimoto, Masaki Kuki, Tetsuo Harada, Takeo Watanabe, and Hiroo Kinoshita "Development of a reflectometer for a large EUV mirror in NewSUBARU ", Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 965819 (9 July 2015); https://doi.org/10.1117/12.2199014
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