29 July 2015 Design of optical component structure for AlxGa1-xN photocathodes
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Proceedings Volume 9659, International Conference on Photonics Solutions 2015; 965918 (2015) https://doi.org/10.1117/12.2192196
Event: International Conference on Photonics Solutions 2015, 2015, Hua Hin, Thailand
Abstract
AlxGa1-xN photocathode was prepared by MOCVD and the reflectivity, transmittance, and absorptivity were test. Based on thin film principle, optical model of t-mode AlxGa1-xN photocathodes was built, and then optical properties and quantum efficiencies were simulated. Results show that AlxGa1-xN photocathodes satisfy the need of detectors with “solar blind” property when the Al component is larger than 0.250. There is an optimal thickness of AlxGa1-xN layer to obtain highest quantum efficiency, and the optimal thickness is 0.3μm. There is close relation between absorptivity and quantum efficiency, which is in good agreement with the “three-step” model. This work gives a reference for the design and preparation of AlxGa1-xN photocathodes.
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Mingzhu Yang, Mingzhu Yang, Benkang Chang, Benkang Chang, Guanghui Hao, Guanghui Hao, } "Design of optical component structure for AlxGa1-xN photocathodes", Proc. SPIE 9659, International Conference on Photonics Solutions 2015, 965918 (29 July 2015); doi: 10.1117/12.2192196; https://doi.org/10.1117/12.2192196
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