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29 July 2015 Transient photocurrent of bulk heterojunction solar cell characterized by ns-laser and sub-ms LED
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Proceedings Volume 9659, International Conference on Photonics Solutions 2015; 96591C (2015) https://doi.org/10.1117/12.2195857
Event: International Conference on Photonics Solutions 2015, 2015, Hua Hin, Thailand
Abstract
We measure the transient photocurrent of APFO3:PCBM bulk heterojunction solar cells illuminated with ns-laser and sub-ms LED light sources. The ratio of the number of collective charges to the number of excited photon (external quantum efficiency, EQE) and the transient photocurrent fall times have been carried out with difference pulse durations and fluences. The EQEs characterized by ns-laser source are shown to obey the bimolecular recombination at high excitation fluences. The increasing of transient photocurrent fall times suggests that the fall times of free charge carriers are effected by deep trap density of state (DoS) and thus the free charge carriers have a sufficient time for bimolecular recombination at short circuit condition. At the same fluences, however, the EQEs characterized by sub-ms LED sources exhibit an excitation fluences independence of EQE. The transient photocurrent fall times with sub-ms LED sources are rather constant when the excitation fluences increases indicating that the deep trap DoS has less effect at short circuit condition for longer pulse duration.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yingyot Infahsaeng, Daniele Danna, Zheng Tang, Torbjorn Pascher, Olle Inganas, Villy Sundstrom, and Arkady Yartserv "Transient photocurrent of bulk heterojunction solar cell characterized by ns-laser and sub-ms LED", Proc. SPIE 9659, International Conference on Photonics Solutions 2015, 96591C (29 July 2015); https://doi.org/10.1117/12.2195857
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