In this paper we present a hybrid OPC solution based on local ILT usage around hot spots. It is named as Local Printability Enhancement (LPE) flow. First, conventional OPC and SRAF placement is applied on the whole design. Then, we apply LPE solution only on the remaining problematic hot spots of the design. The LPE flow also takes into account the mask rules so that it maintains the mask rule check (MRC) compliance through the borders of the repaired hot spot’s areas. We will demonstrate that the LPE flow enlarges the process window around hot spots and gives better lithography quality than baseline. The simulation results are confirmed on silicon wafer where all the hot spots are printed. We will demonstrate that LPE flow enlarges the depth of focus of the most challenging hot spot by 30nm compared to POR conventional solution. Because the proposed flow applies ILT solution on very local hot spot areas, the total OPC run time remains acceptable from manufacturing side.
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N. Zeggaoui, G. Landie, A. Villaret, V. Farys, E. Yesilada, A. Tritchkov, J. Word, "Enabling the 14nm node contact patterning using advanced RET solutions," Proc. SPIE 9661, 31st European Mask and Lithography Conference, 96610Q (4 September 2015);