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11 September 2015 Structure of CNT thin films for cold cathode emitters
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Proceedings Volume 9662, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2015; 96624G (2015) https://doi.org/10.1117/12.2205796
Event: XXXVI Symposium on Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments (Wilga 2015), 2015, Wilga, Poland
Abstract
In this paper different structures of CNT layer cathode showing different electron emission characteristics depending on Ni concentration are presented. The cathode’s layers were obtained by PVD/CVD method. Nanocomposite C-Ni layer were prepared in PVD step. This C-Ni layer was precursor layer for CNT layer growth in CVD process. Prepared CNT layers were studied with SEM and TEM. Their emissive properties were investigated in means F-N theory. It was found that the threshold field for these emitters varies from 1,7 V/μm to 20 V/μm. For some types of CNT cathodes it is possible to obtain the emission current intensity 55μA at the electric field ~3 V/μm.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Kozłowski, I. Stępińska, K. Sobczak, and E. Czerwosz "Structure of CNT thin films for cold cathode emitters", Proc. SPIE 9662, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2015, 96624G (11 September 2015); https://doi.org/10.1117/12.2205796
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