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11 September 2015 Field emission from CNT films deposited on porous Si
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Proceedings Volume 9662, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2015; 96624J (2015) https://doi.org/10.1117/12.2205844
Event: XXXVI Symposium on Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments (Wilga 2015), 2015, Wilga, Poland
Abstract
The carbon nanotubes films on various type of porous Si substrate were prepared. Three methods of porous Si preparation electrolysis, wet etching with silver nitrate and with potassium hydroxide were used. CNTs films were obtained by two step method containing PVD and CVD process. These yield of field emission depended on the type of film. I-U characteristics and F-N plots are discussed for these films. The short-term stability of emission measurements results are also presented. Depending on technological parameters of Si etching the topography of samples is different and it affects on the emission currents intensity and the electric threshold field.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Izabela Stępińska, Halina Wronka, Stanisław Waszuk, Joanna Radomska, Mirosław Kozłowski, Elżbieta Czerwosz, and Florea Craciunoiu "Field emission from CNT films deposited on porous Si", Proc. SPIE 9662, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2015, 96624J (11 September 2015); https://doi.org/10.1117/12.2205844
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