22 December 2015 Fabrication and optical characterisation of InGaN/GaN nanorods
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We report the fabrication of densely packed InGaN/GaN nanorods with high hexagonal periodicity. Nanosphere lithography and reactive ion etching were adopted to fabricate the nanorods from planar multiple quantum wells (MQWs). Compared to the planar MQWs, the nanorods exhibit significant luminescence enhancement. This is mostly attributed to the increased radiative recombination and light extraction efficiency. Both photoluminescence and Raman measurements confirmed in-plane strain relaxation in the MQWs after nanofabrication. A reduction in strain-induced quantum confined Stark effect in the nanorods increased radiative recombination. This work is most crucial to the understanding of optical properties with respect to the carrier transport and recombination in InGaN/GaN nanorods.
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Xi Dai, Xiaoming Wen, Michael Latzel, Martin Heilmann, Christian Appelt, Yu Feng, Jianfeng Yang, Weijian Chen, Shujuan Huang, Santosh Shrestha, Silke Christiansen, Gavin Conibeer, "Fabrication and optical characterisation of InGaN/GaN nanorods", Proc. SPIE 9668, Micro+Nano Materials, Devices, and Systems, 96680F (22 December 2015); doi: 10.1117/12.2202420; https://doi.org/10.1117/12.2202420

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