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22 December 2015 Wafer-scale epitaxial graphene on SiC for sensing applications
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Abstract
The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2’’ 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene’s uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer’s method were also fabricated for comparison.
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Mikael Karlsson, Qin Wang, Yichen Zhao, Wei Zhao, Muhammet S. Toprak, Tihomir Iakimov, Amer Ali, Rositza Yakimova, Mikael Syväjärvi, and Ivan G. Ivanov "Wafer-scale epitaxial graphene on SiC for sensing applications", Proc. SPIE 9668, Micro+Nano Materials, Devices, and Systems, 96685T (22 December 2015); https://doi.org/10.1117/12.2202440
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