Translator Disclaimer
15 October 2015 Carrier generation in high gain GaAs photoconductive semiconductor switches
Author Affiliations +
Proceedings Volume 9671, AOPC 2015: Advances in Laser Technology and Applications; 96711D (2015) https://doi.org/10.1117/12.2199894
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China
Abstract
The carrier generation in high gain GaAs photoconductive semiconductor switches (PCSSs) is researched. Based on the "electron avalanche domain (EAD)" ideas, the physical process of carrier generation is explained. This analysis supports the current filaments velocities that can exceed the value of 2 × 109 cm/s. The results of this theoretical investigation are consistent with those of the reported experimental observations.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hong Liu, Li Zheng, Wei Yang, Xiaoling Zhu, Yuting Yang, and Dan Wu "Carrier generation in high gain GaAs photoconductive semiconductor switches", Proc. SPIE 9671, AOPC 2015: Advances in Laser Technology and Applications, 96711D (15 October 2015); https://doi.org/10.1117/12.2199894
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
Back to Top