Optical data storage (ODS) represents revolutionary progress for the field of information storage capacity. When the thickness of data recording layer is similar to a few nanometer even atomic scale, the data point dimension can decrease to the minimum with stable mechanical property. Thus the new generation of ODS requires data recording layer in nanoscale to improve areal storage density, so that the more digital information can be stored in limited zone. Graphene, a novel two-dimensional (2D) material, is a type of monolayer laminated structure composed of carbon atoms and is currently the thinnest known material (the thickness of monolayer graphene is 3.35 Å). It is an ideal choice as a active layer for ODS media. Reduced graphene oxide, a graphene derivative, has outstanding polarization-dependent absorption characteristics under total internal reflection (TIR). The strong broadband absorption of reduced graphene oxide causes it to exhibit different reflectance for transverse electric (TE) and transverse magnetic (TM) modes under TIR, and the maximum reflectance ratio between TM and TE modes is close to 8 with 8 nm reduced graphene oxide films. It opens a door for a high signal to noise ratio (SNR) graphene-based optical data storage. Here, 8 nm high-temperature reduced graphene oxide (h-rGO) films was used for the ultrathin active layer of ODS. The data writing was performed on the h-rGO active layer based on photolithography technology. Under TIR, a balanced detection technology in the experiment converts the optical signals into electric signals and simultaneously amplifies them. The reading results show a stable SNR up to 500, and the graphene-based ODS medium has a high transparency performance.