15 October 2015 The influence of thermal treatment on the passivation of SiNx film and the dark current of p-i-n InGaAs detector
Author Affiliations +
Proceedings Volume 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology; 967411 (2015) https://doi.org/10.1117/12.2199226
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China
Abstract
In this paper, we focus on the influence of thermal treatment on the passivation of silicon nitride (SiNx) film of p-i-n InGaAs detector. In our experiment, the perimeter/area (P/A) test diodes are fabricated by using two different device processes, and the relationship between the dark current density and P/A is investigated. The results indicate that the thermal treatment in the vacuum can be able to improve the passivation SiNx film effect and thus suppress the perimeterrelated current with the decrease of two orders of magnitude. Then the analysis of dark current source is carried out. The result shows that the sample with SiNx film through thermal treatment is composed of diffusion current and ohmic current, on the contrary, the other mainly consists of surface leakage current and diffusion current. It is illustrated that the passivation effect of SiNx was strengthened after thermal treatment and surface leakage current can be suppressed.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gaoqi Cao, Gaoqi Cao, Hengjing Tang, Hengjing Tang, Xiumei Shao, Xiumei Shao, Rui Wang, Rui Wang, Qingfa Li, Qingfa Li, Jifeng Cheng, Jifeng Cheng, Tao Li, Tao Li, Xue Li, Xue Li, Haimei Gong, Haimei Gong, } "The influence of thermal treatment on the passivation of SiNx film and the dark current of p-i-n InGaAs detector", Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 967411 (15 October 2015); doi: 10.1117/12.2199226; https://doi.org/10.1117/12.2199226
PROCEEDINGS
5 PAGES


SHARE
Back to Top