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15 October 2015 CMOS buried multi-junction (BMJ) detector for bio-chemical analysis
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Proceedings Volume 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology; 967412 (2015)
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China
The CMOS buried multi-junction (BMJ) detector with multiple outputs has distinct spectral responses that may be exploited for applications such as bio-chemical analysis. We tackle here dark current issue by identifying different components inside the detector structure. The identification methods are based on the observation of bias and temperature dependence, as well as measurements of test detector chip integrating different design variations. Surface thermal generation may become predominant when the detector size shrinks, thus causing dark current degradation. To prevent this effect, we propose a low-sized detector structure with passivation of all its surrounding Si/SiO2 interface areas.

Also for the detector readout, we present a multi-channel charge-amplifier architecture with noise analysis. Effects of noise coming from amplifiers and related to the coupled detector’s dynamic conductances are illuminated. To pick up weak signals, synchronous detection can be implemented. A BDJ (Buried Double Junction) detector chip designed with a switched-phase architectural approach gives a minimum detectable signal of 15μlx@555nm or 1μlx@555nm at 27°C or – 10°C, for an integration time of 3s or 45s respectively.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guo-Neng Lu, Thierry Courcier, Bastien Mamdy, Sylvain Feruglio, Paul G. Charette, Vincent Aimez, Olivier Romain, and Patrick Pittet "CMOS buried multi-junction (BMJ) detector for bio-chemical analysis", Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 967412 (15 October 2015);

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