15 October 2015 Enhancement of external quantum efficiency of GaAs light emitting diodes on GaAs substrate with photonic crystal structures
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Proceedings Volume 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology; 96741D (2015) https://doi.org/10.1117/12.2199407
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China
Abstract
Near infrared light emitting diodes (LEDs) play an important role in infrared photodetectors; however, external quantum efficiency of GaAs LEDs is greatly confined as a result of critical angle and Fresnel diffraction. In this study, polystyrene spheres are used to fabricate photonic crystal. A ring-shaped ohmic contact was introduced to the device, and the current-voltage curves and light emitting efficiency were measured to characterize the property of device. The LED device with surface nano-structure exhibited better external quantum efficiency (EQE) and improved light extraction efficiency (LEE) in near infrared light emitting area compared to non-structure device.
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Mengyao Li, Honglou Zhen, Youliang Jing, Han Wang, Liang Li, Ning Li, "Enhancement of external quantum efficiency of GaAs light emitting diodes on GaAs substrate with photonic crystal structures", Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 96741D (15 October 2015); doi: 10.1117/12.2199407; https://doi.org/10.1117/12.2199407
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