15 October 2015 Sub-100ps single photoelectron time resolution of a strip silicon photomultiplier for time-resolved optical spectroscopy
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Proceedings Volume 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology; 96741I (2015) https://doi.org/10.1117/12.2199508
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China
Abstract
SiPM with epitaxial quenching resistors developed at NDL (Novel Device Laboratory, Beijing) could alleviate the conflict between large dynamic range and high photon detection efficiency (PDE). It can be used as low light level detector in various applications with excellent single photoelectron time resolution (SPTR) and photon counting capacity. SPTR is mainly determined by the intrinsic structure parameters of the SiPM. However, it is also limited to measurement setup, electronics readout and the ultra-small signal of single photoelectron level. In this work, we designed and fabricated a 1 mm × 1 mm strip SiPM array for possible applications in time-resolved optical spectroscopy. The SiPM array consists of sixteen 50 μm × 1 mm strip SiPM elements. Each element contains five hundred 6.5 μm × 6.5 μm micro avalanche photodiode (APD) cells with 10μm pitch. The strip SiPM demonstrated SPTR of 68 ps (FWHM), peak PDE of 17% around 450 nm and high photon number resolving and photon counting capability.
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Shenyuan Wang, Shenyuan Wang, Rongdan Liu, Rongdan Liu, Kun Liang, Kun Liang, Ru Yang, Ru Yang, Dejun Han, Dejun Han, } "Sub-100ps single photoelectron time resolution of a strip silicon photomultiplier for time-resolved optical spectroscopy", Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 96741I (15 October 2015); doi: 10.1117/12.2199508; https://doi.org/10.1117/12.2199508
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