InxGa1-xAs ternary compound is suitable for detection in the shortwave infrared (1-3μm) band. The alloy In0.53Ga0.47As is lattice-matched to InP substrate and has a wavelength response between 0.9μm to 1.7μm at room temperature. The increase of indium composition can extend the wavelength response to longer infrared wave. With the Indium content 0.83, the cutoff wavelength can be extended to 2.6μm. In this paper, we reported the performance of 64x64 pixels mesa-type back-illuminated extended wavelength InGaAs detector arrays. The mesa type detectors were fabricated by ICP etching, side-wall and surface passivation by ICPCVD (inductively coupled plasma chemical vapor deposition) based on the MBE-grown p-i-n In0.83Al0.17As/In0.83Ga0.17As/InxAl1-xAs/InP epitaxial materials. The I-V characteristics and electro-optical performances of these detectors at different temperatures were measured, and the properties such as dark current, response spectra, responsivity, detectivity were analyzed. The results indicate that the dark current of In0.83Ga0.17As photodiodes decreases with decreasing temperature, varying from 4×10-4A/cm2 at 290K to 1.7×10-8A/cm2 at 180K. The spectral response showed slightly blue shift while the detectors were cooling down, and the cut-off wavelength is 2.57μm at room temperature and 2.43μm at 200K, respectively. The dark current density is 115nA/cm2 at 200K and -10mV bias voltage. The peak detectivity is 6.08E11cmHz1/2W-1.