15 October 2015 Simulation and optimization of p-i-n In0.53Ga0.47As/InP photodetector
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Proceedings Volume 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology; 96742D (2015) https://doi.org/10.1117/12.2201032
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China
Abstract
In this paper, the two-dimensional (2-D) simulations of p-i-n type InP/In0.53Ga0.47As/InP photodetector at low bias are presented. The modeling results fit the experimental results well, verifying the validity of our model and the desirability of the simulated results. In order to further optimize the detector structure, the effects of thickness and doping concentration of the absorption layer on the dark current are both simulated and discussed, the results can be explained by the depletion region width in the junction area, and the details are shown in the energy band diagrams and the electric field maps of the p-i-n InP/In0.53Ga0.47As/InP photodetector.
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Min Zhu, Jun Chen, Jiabing Lv, Hengjing Tang, Xue Li, "Simulation and optimization of p-i-n In0.53Ga0.47As/InP photodetector", Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 96742D (15 October 2015); doi: 10.1117/12.2201032; https://doi.org/10.1117/12.2201032
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