15 October 2015 Detailed analysis on the responsivity of InP/InGaAs HPTs for near-IR optoelectronic applications
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Proceedings Volume 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology; 96742E (2015) https://doi.org/10.1117/12.2201033
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China
Abstract
In this letter, we analyzed an analytical spectral response(SR) model for a near-infrared(NIR) heterojuction phototransistor (HPT) with the purpose of understanding the behavior of lattice-matched In0.53Ga0.47As/InP HPT achieving the current gain with changing device and material parameters. The responsivity of the model we designed leads to a good agreement between theoretical and experimental results for the incident wavelength radiations at 980, 1310, and 1550nm, the responsivity is developed from the solution of continuity equations that dominate the excess optically generated minority-carriers in the active layers of the HPT with boundary conditions.
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Jiabing Lv, Jiabing Lv, Jun Chen, Jun Chen, Min Zhu, Min Zhu, } "Detailed analysis on the responsivity of InP/InGaAs HPTs for near-IR optoelectronic applications", Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 96742E (15 October 2015); doi: 10.1117/12.2201033; https://doi.org/10.1117/12.2201033
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