Comparison between highly doped semiconductor and metal infrared antenna

Yanxiang Yang; Jianjun Lai; Hongwei Li; Changhong Chen

doi:10.1117/12.2201120

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15 October 2015 Comparison between highly doped semiconductor and metal infrared antenna

Yanxiang Yang, Jianjun Lai, Hongwei Li, Changhong Chen

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Proceedings Volume 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology; 96742H (2015) https://doi.org/10.1117/12.2201120
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China

Abstract

Optical antenna can strongly enhance the interaction of light with matter by their ability to localize electromagnetic fields on nano-metric scale. This allows for the engineering of absorption capabilities to visible and infrared detectors with very small active areas. In this study, we focused on the study of metal and semiconductor infrared antennas for nano-bolometer application. The infrared antennas are applied for increasing the effective absorbing across section, enhancing the field intensity at the gap of the antennas and improving the absorbance of bolometer materials located at the gap. We perform numerical simulation of the characteristics of infrared antennas and analysis the influence of various parameters of antennas (length, wide, and material types) and optimized these parameters to achieve the maximum field enhancement for an optical antenna. We also highlight the comparisons of field enhancement of infrared antenna materials between metal and highly doped semiconductor and discuss some practical issues related to the application of infrared antenna for infrared detectors.

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Yanxiang Yang, Jianjun Lai, Hongwei Li, and Changhong Chen "Comparison between highly doped semiconductor and metal infrared antenna", Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 96742H (15 October 2015); https://doi.org/10.1117/12.2201120

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